document number: 89406 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 18-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount schottky barrier rectifier ss12 thru ss16 vishay general semiconductor new product features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? low forward voltage drop ? high surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in low voltage, high frequency inverters, freewheeling, dc/dc converte rs, and polarity protection applications. mechanical data case: do-214ac (sma) molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 1.0 a v rrm 20 v to 60 v i fsm 40 a v f 0.50 v, 0.75 v t j max. 125 c, 150 c do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss12 ss13 ss14 ss15 ss16 unit device marking code s2 s3 s4 s5 s6 v maximum repetitive pe ak reverse voltage v rrm 20 30 40 50 60 v maximum rms voltage v rms 14 21 28 35 42 v maximum dc blocking voltage v dc 20 30 40 50 60 v maximum average forward rectified current at t l (fig. 1) i f(av) 1.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 40 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction temperature range t j - 65 to + 125 - 65 to + 150 c storage temperature range t stg - 65 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89406 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 18-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ss12 thru ss16 vishay general semiconductor new product note (1) pulse test: 300 s pulse width, 1 % duty cycle note (1) pcb mounted with 0.2" x 0.2" (5 .0 mm x 5.0 mm) copper pad areas ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive pe ak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol ss12 ss13 ss14 ss15 ss16 unit maximum instantaneous forward voltage 1.0 a v f (1) 0.50 0.75 v maximum dc reverse current at rated dc blocking voltage t a = 25 c i r (1) 0.2 ma t a = 100 c 6.0 5.0 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ss12 ss13 ss14 ss15 ss16 unit typical thermal resistance r ? ja (1) 88 c/w r ? jl (1) 28 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode ss14-m3/61t 0.064 61t 1800 7" diam eter plastic tape and reel ss14-m3/5at 0.064 5at 7500 13" diam eter plastic tape and reel 50 70 90 110 130 150 0 0.5 1.0 170 resistive or inductive load ss12 thru ss14 ss15 and ss16 lead temperature (c) average forward cu rrent (a) p.c.b. mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas 1 10 100 0 10 20 30 40 50 at rated t l 8.3 ms single half sine-wave number of cycles at 60 hz peak forward surge current (a)
document number: 89406 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 18-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ss12 thru ss16 vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical junction capacitance package outline dimensions in inches (millimeters) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 0 0.01 0.1 instantaneous forward voltage (v) instantaneous forward current (a) pulse width = 300 s 1 % duty cycle t j = 150 c t j = 125 c t j = 25 c ss12 thru ss14 ss15 and ss16 0 20 40 60 0.001 0.01 0.1 1 10 100 80 100 percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t j = 75 c t j = 125 c t j = 25 c ss12 thru ss14 ss15 and ss16 100 10 10 100 1000 0.1 1 reverse voltage (v) junction capacitance (pf) ss12 thru ss14 ss15 and ss16 t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pa d layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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